Polonica tenuis Tungsten Poloniae Tungsten Poloniae Tungsten Poloniae 99.95% Poloniae TunGsten Sheet TunGsten
Productum parametri
| Notus | Hsg |
| Vexillum | Astmb760-07; GB / T3875-83 |
| Gradus | W1, W2, Wal1, Wal2 |
| Densitas | 19.2g / cc |
| Pudicitia | ≥99.95% |
| Magnitudo | Min * Width300mm max * l000000mm max |
| Superficies | Nigrum / alkali Purgato / Polito |
| Point liquescens | 3260C |
| Processus | calidum volubilem |
chemical compositionem
| Chemical compositionem | ||||||||||
| Immunditia contentus (%), ≤ | ||||||||||
| Al | Ca | Fe | Mg | Mo | Ni | Si | C | N | O | |
| Statera | 0.002 | 0.005 | 0.005 | 0.003 | 0.01 0.01 | 0.003 | 0.005 | 0.008 | 0.003 | 0.005 |
Dimensionem et licitum varietates
| Crassities | Crassitudine tolerantia | Latitudo | Width tolerantia | Longitudo | Longitudo tolerantia | |
| I | II | |||||
| 0.10-0.20 | ± 0.02 | ± 0.03 | 30-150 | ± III | 50-400 | ± III |
| > 0.20-0.30 | ± 0.03 | ± 0.04 | 50-200 | ± III | 50-400 | ± III |
| > 0.30-0.40 | ± 0.04 | ± 0.05 | 50-200 | ± III | 50-400 | ± III |
| > 0.40-0.60 | ± 0.05 | ± 0.06 | 50-200 | ± IV | 50-400 | ± IV |
| > 0.60-0.80 | ± 0.07 | ± 0.08 | 50-200 | ± IV | 50-400 | ± IV |
| > 0.8-1.0 | ± 0.08 | ± 0.10 | 50-200 | ± IV | 50-400 | ± IV |
| > 1.0-2.0 | ± 0.12 | ± 0.20 | 50-200 | ± V | 50-400 | ± V |
| > 2.0-3.0 | ± 0.02 | ± 0.30 | 50-200 | ± V | 50-400 | ± V |
| > 3.0-4.0 | ± 0.03 | ± 0.40 | 50-200 | ± V | 50-400 | ± V |
| > 4.0-6.0 | ± 0.04 | ± 0.50 | 50-150 | ± V | 50-400 | ± V |
Pluma
Altus liquescens punctum, summus densitas, summus temperatus oxidatio resistentia, diu muneris vita, resistentia ad corrosionem.
Tungsten tubo late usus est in thermocouple praesidio tubo, sapphirus crystal fornacem et altum caliditas fornacem, etc. Bango potest providere Tungsten fistularum cum High- praecisione deformatio.
Applicatio
Tungsten laminam Applications: A99.95% puritas Tungsten laminam
I. æstus resistentia components: calor scutum, calefactio elementum est summus temperatus vacuo fornacem.
II. Tungsten spundas target pro vacuo coating et evaporatio coating.
III. Electronic et semi-mores components.
IV. Ion implantata components.
V. Tungsten in Sapphirus Crystalli Furnaces et vacuum Furnorum.
VI. INCERRATOR Industry: primum murum fusione reactors
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