Lamina Tungsteni Tenuis Polita Altae Puritatis 99.95% OEM, Laminae Tungsteni pro Industria
Parametri Producti
Nota | HSG |
Norma | ASTM MB760-07; GB/T3875-83 |
Gradus | W1, W2, WAL1, WAL2 |
Densitas | 19.2g/cc |
Puritas | ≥99.95% |
Magnitudo | Crassitudo 0.05mm min. * Latitudo 300mm max. * Longitudo 1000mm max. |
Superficies | Purgatio nigra/alcali/polita |
Punctum fusionis | 3260C |
Processus | laminatio calida |
compositio chemica
Compositio chemica | ||||||||||
Contentum impuritatis (%), ≤ | ||||||||||
Al | Ca | Fe | Mg | Mo | Ni | Si | C | N | O | |
Aequilibrium | 0.002 | 0.005 | 0.005 | 0.003 | 0.01 | 0.003 | 0.005 | 0.008 | 0.003 | 0.005 |
Dimensiones et variationes permissae
Crassitudo | Tolerantia Crassitudinis | Latitudo | Tolerantia Latitudinis | Longitudo | Tolerantia Longitudinis | |
I | II | |||||
0.10-0.20 | ±0.02 | ±0.03 | 30-150 | ±3 | 50-400 | ±3 |
>0.20-0.30 | ±0.03 | ±0.04 | 50-200 | ±3 | 50-400 | ±3 |
>0.30-0.40 | ±0.04 | ±0.05 | 50-200 | ±3 | 50-400 | ±3 |
>0.40-0.60 | ±0.05 | ±0.06 | 50-200 | ±4 | 50-400 | ±4 |
>0.60-0.80 | ±0.07 | ±0.08 | 50-200 | ±4 | 50-400 | ±4 |
>0.8-1.0 | ±0.08 | ±0.10 | 50-200 | ±4 | 50-400 | ±4 |
>1.0-2.0 | ±0.12 | ±0.20 | 50-200 | ±5 | 50-400 | ±5 |
>2.0-3.0 | ±0.02 | ±0.30 | 50-200 | ±5 | 50-400 | ±5 |
>3.0-4.0 | ±0.03 | ±0.40 | 50-200 | ±5 | 50-400 | ±5 |
>4.0-6.0 | ±0.04 | ±0.50 | 50-150 | ±5 | 50-400 | ±5 |
Characteristica
Altum punctum liquefactionis, alta densitate, resistentia oxidationis altae temperaturae, longa vita utilis, resistentia corrosioni.
Tubus tungsteni late adhibetur in tubo protectionis thermocouple, camino crystalli sapphirini et camino altae temperaturae, et cetera. Bango tubos tungsteni praecisione magna, superficie polita, magnitudine recta, et deformatione altae temperaturae praebere potest.
Applicatio
Usus Laminae Wolframii: Lamina Wolframii puritatis 99.95%
1. Partes resistentiae caloris: scutum caloris, elementum calefaciens fornacis vacui altae temperaturae.
2. Scopi tungsteni pro pulverisatione cathodica ad stratum vacuum et stratum evaporationis.
3. Partes electronicae et semiconductivae.
4. Partes ionicae implantatae.
5. Scaphae tungsteni pro caminis crystalli sapphirini et caminis vacui.
6. Industria incerta: Primus murus reactorum fusionis